Статьи по ключевому слову "GaN films; semi-polar GaN; V-defects; etch pits; silicon carbide films; heterostructures; wide-band semiconductors; nanostructures"
The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures
- Год: 2014
- Том: 21
- Выпуск: 3
- 8
- 1028
- Страницы: 266-274