MPM
Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
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Author Redkov
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Redkov
Redkov
Affiliation
Institute of Problems of Mechanical Engineering of Russian Academy of Sciences
St.Petersburg, Russia

Evolution of crystal morphology under flow of low-energy particles: vacancy mechanism

A.V. Redkov A.V. Osipov S.A. Kukushkin
  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 4
  • 2155
  • Pages: 82-92

Nucleation and growth mechanisms of CdTe thin films on silicon substrates with silicon carbide buffer layers

A.A. Koryakin S.A. Kukushkin A.V. Redkov
  • Year: 2017
  • Volume: 32
  • Issue: 3
  • 3
  • 2140
  • Pages: 262-271

Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates

V.V. Kidalov S.A. Kukushkin A.V. Osipov A.V. Redkov A.S. Grashchenko I.P. Soshnikov M.E. Boiko M.D. Sharkov A.F. Dyadenchuk
  • Year: 2018
  • Volume: 36
  • Issue: 1
  • 48
  • 2965
  • Pages: 39-52

Polycrystalline films of phosphors Cd (1-x-y-z) (CuyAgz) ZnxS on the silicon substrate with the silicon carbide buffer layer: structure and properties

S.P. Bogdanov S.P. Bogdanov A.V. Redkov
  • Year: 2019
  • Volume: 42
  • Issue: 4
  • 7
  • 2253
  • Pages: 396-406