MPM
Materials physics and mechanics
Peter the Great St. Petersburg Polytechnic University
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Since 2000
ISSN 1605-8119
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Author
E.S. Kolodeznyi
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Latest issues
2024
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Volume 52
Issue 6
2024
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Volume 52
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2024
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Volume 52
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Issue 3
E.S. Kolodeznyi
Affiliation
ITMO Univesity
St.Petersburg, Russia
Thermal analysis of phosphor containing silicone layer in high power LEDs
E.S. Kolodeznyi
I.N. Ivukin
V.S. Serebryakova
V.E. Bougrov
A.E. Romanov
Year: 2014
Volume: 21
Issue: 3
2
1331
Pages: 283-287
Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors
M.A. Rozhkov
E.S. Kolodeznyi
A.M. Smirnov
V.E. Bougrov
A.E. Romanov
Year: 2015
Volume: 24
Issue: 2
27
1696
Pages: 194-200
Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520-1580 nm
A.V. Babichev
A.S. Kurochkin
E.S. Kolodeznyi
A.G. Gladyshev
I.I. Novikov
L.Ya. Karachinsky
A.Yu. Egorov
Year: 2015
Volume: 24
Issue: 3
5
1181
Pages: 284-288
Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures
I.S. Polukhin
G.A. Mikhailovskiy
D.A. Rybalko
Yu.V. Solov'ev
E.P. Petukhov
M.A. Odnoblyudov
E.S. Kolodeznyi
A.K. Mikhailov
V.E. Bougrov
H. Lipsanen
Year: 2016
Volume: 29
Issue: 1
2
1270
Pages: 71-75
The structural properties of elastically strained InGaAlAs/InGaAs/InP heterostructures grown by molecular beam epitaxy
I.I. Novikov
A.V. Babichev
E.S. Kolodeznyi
A.S. Kurochkin
A.G. Gladyshev
L.Ya. Karachinsky
V.N. Nevedomsky
S.A. Blokhin
A.A. Blokhin
A.M. Nadtochiy
A.Yu. Egorov
Year: 2016
Volume: 29
Issue: 1
7
1235
Pages: 76-81
Study of antireflection coatings for high speed 1.3 -1.55 µm InGaAs/InP PIN photodetector
E.S. Kolodeznyi
I.I. Novikov
A.G. Gladyshev
S.S. Rochas
K.D. Sharipo
L.Ya. Karachinsky
A.Yu. Egorov
V.E. Bougrov
Year: 2017
Volume: 32
Issue: 2
18
1583
Pages: 194-197
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