Kolodeznyi | Materials physics and mechanics

MPM

Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University

Since 2000

ISSN 1605-8119

Author Kolodeznyi

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Kolodeznyi

Kolodeznyi

Affiliation

ITMO Univesity

St.Petersburg, Russia

Thermal analysis of phosphor containing silicone layer in high power LEDs

E.S. Kolodeznyi I.N. Ivukin V.S. Serebryakova V.E. Bougrov Romanov A.E.

Year: 2014
Volume: 21
Issue: 3

3
2018
Pages: 283-287

Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors

M.A. Rozhkov E.S. Kolodeznyi A.M. Smirnov V.E. Bougrov Romanov A.E.

Year: 2015
Volume: 24
Issue: 2

32
2480
Pages: 194-200

Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520−1580 nm

A.V. Babichev A.S. Kurochkin E.S. Kolodeznyi A.G. Gladyshev I.I. Novikov L.Ya. Karachinsky A.Yu. Egorov

Year: 2015
Volume: 24
Issue: 3

6
1799
Pages: 284-288

Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures

I.S. Polukhin G.A. Mikhailovskiy D.A. Rybalko Yu.V. Solov'ev E.P. Petukhov M.A. Odnoblyudov E.S. Kolodeznyi A.K. Mikhailov V.E. Bougrov H. Lipsanen

Year: 2016
Volume: 29
Issue: 1

3
1951
Pages: 71-75

The structural properties of elastically strained InGaAlAs/InGaAs/InP heterostructures grown by molecular beam epitaxy

I.I. Novikov A.V. Babichev E.S. Kolodeznyi A.S. Kurochkin A.G. Gladyshev L.Ya. Karachinsky V.N. Nevedomsky S.A. Blokhin A.A. Blokhin A.M. Nadtochiy A.Yu. Egorov

Year: 2016
Volume: 29
Issue: 1

8
1887
Pages: 76-81

Study of antireflection coatings for high speed 1.3 -1.55 µm InGaAs/InP PIN photodetector

E.S. Kolodeznyi I.I. Novikov A.G. Gladyshev S.S. Rochas K.D. Sharipo L.Ya. Karachinsky A.Yu. Egorov V.E. Bougrov

Year: 2017
Volume: 32
Issue: 2

21
2325
Pages: 194-197