Articles by keywords "silicon carbide"
Gas phase large-scale synthesis of Silicon carbide nanowires by industrial electron accelerator
- Year: 2023
- Volume: 51
- Issue: 4
- 19
- 315
- Pages: 96-106
Room-temperature quantum oscillations of static magnetic susceptibility of silicon-carbide epitaxial layers grown on a silicon substrate by the method of the coordinated substitution of atoms
- Year: 2022
- Volume: 50
- Issue: 1
- 34
- 745
- Pages: 66-73
Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal
- Year: 2019
- Volume: 42
- Issue: 2
- 8
- 1191
- Pages: 178-182
Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates
- Year: 2019
- Volume: 42
- Issue: 1
- 6
- 1169
- Pages: 30-39
Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates
- Year: 2018
- Volume: 36
- Issue: 1
- 29
- 1300
- Pages: 39-52
Nucleation and growth mechanisms of CdTe thin films on silicon substrates with silicon carbide buffer layers
- Year: 2017
- Volume: 32
- Issue: 3
- 2
- 907
- Pages: 262-271
Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces
- Year: 2017
- Volume: 32
- Issue: 2
- 6
- 1329
- Pages: 108-116
Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitution in Si crystal lattice
- Year: 2015
- Volume: 22
- Issue: 2
- 5
- 926
- Pages: 183-190
The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures
- Year: 2014
- Volume: 21
- Issue: 3
- 8
- 1020
- Pages: 266-274
Photoluminescence from SiC Nanocrystals Embedded in SiO2
- Year: 2001
- Volume: 4
- Issue: 2
- 5
- 842
- Pages: 85-88