Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

Authors:
A.E. Romanov M.G. Mynbaeva A.I. Pechnikov Sh.Sh. Sharofidinov V.E. Bougrov K.D. Mynbaev S.I. Stepanov M.A. Odnoblyudov V.I. Nikolaev
Abstract:

A possibility is shown to use GaN/Al2O3 substrates with internal voids fabricated with metal-organic chemical vapor deposition (MOCVD) for the growth of light-emitting structures based on p-n junctions by hydride vapor-phase epitaxy (HVPE). Within the frames of the work, an extensive characterization of the grown HVPE films with n- and p-type conductivity and formed p-n junctions was performed. The results obtained show possibilities that HVPE method offers in respect to the fabrication of the elements of device structures based on GaN.