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Kirilenko
Affiliation
Ioffe Institute
St.Petersburg, Russia
Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates
- Year: 2016
- Volume: 29
- Issue: 1
- 9
- 2238
- Pages: 24-31
Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates
- Year: 2017
- Volume: 32
- Issue: 2
- 9
- 2373
- Pages: 178-185
Structural characterization of bulk (AlXGa1-X)2O3 crystals grown by the ózochralski method
- Year: 2019
- Volume: 42
- Issue: 6
- 12
- 2648
- Pages: 797-801