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Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
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Articles by keywords "heterostructure"

On physical properties of few-photon detectors based on structures with micropillars

Tsarev D. Bazhenov A. M.A. Odnoblyudov Alodjants A.
  • Year: 2021
  • Volume: 47
  • Issue: 6
  • 37
  • 1579
  • Pages: 978-986

Polycrystalline films of phosphors Cd(1-x-y-z) (CuyAgz) ZnxS on the silicon substrate with the silicon carbide buffer layer: structure and properties

S.P. Bogdanov S.P. Bogdanov A.V. Redkov
  • Year: 2019
  • Volume: 42
  • Issue: 4
  • 6
  • 1373
  • Pages: 396-406

Model for the formation of GaAs-Au axial nanowire heterostructures under flash lamp annealing

V.G. Dubrovskii
  • Year: 2019
  • Volume: 42
  • Issue: 4
  • 1
  • 1303
  • Pages: 373-379

Study of thermionic-tunnel component contribution in heterostructures of InGaAs/GaAs with a single quantum well by admittance methods

I.V. Ivanova V.I. Zubkov
  • Year: 2019
  • Volume: 41
  • Issue: 1
  • 4
  • 1298
  • Pages: 30-35

Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructures

M.S. Baranova Dzmitryi Hvazdouski V. Stempitsky Sviatlana Vauchok Miroslav Najbuk
  • Year: 2018
  • Volume: 39
  • Issue: 1
  • 22
  • 1543
  • Pages: 8-14

The structural properties of elastically strained InGaAlAs/InGaAs/InP heterostructures grown by molecular beam epitaxy

I.I. Novikov A.V. Babichev E.S. Kolodeznyi A.S. Kurochkin A.G. Gladyshev L.Ya. Karachinsky V.N. Nevedomsky S.A. Blokhin A.A. Blokhin A.M. Nadtochiy A.Yu. Egorov
  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 7
  • 1108
  • Pages: 76-81

Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures

I.S. Polukhin G.A. Mikhailovskiy D.A. Rybalko Yu.V. Solov'ev E.P. Petukhov M.A. Odnoblyudov E.S. Kolodeznyi A.K. Mikhailov V.E. Bougrov H. Lipsanen
  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 2
  • 1124
  • Pages: 71-75

Simulation operation regimes of passive mode-locked laser based on InGaAlAs/InGaAs/InP heterostructures

I.S. Polukhin G.A. Mikhailovskiy D.A. Rybalko Yu.V. Solov'ev M.A. Odnoblyudov A.E. Gubenko D.A. Livshits A.N. Firsov A.N. Kirsyaev A.A. Efremov V.E. Bougrov
  • Year: 2016
  • Volume: 27
  • Issue: 1
  • 1
  • 1077
  • Pages: 74-78

Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520-1580 nm

A.V. Babichev A.S. Kurochkin E.S. Kolodeznyi A.G. Gladyshev I.I. Novikov L.Ya. Karachinsky A.Yu. Egorov
  • Year: 2015
  • Volume: 24
  • Issue: 3
  • 5
  • 1065
  • Pages: 284-288

Critical thickness and bow of pseudomorphic InxGa1-xAs-based laser heterostructures grown on (001)GaAs and (001)InP substrates

M.E. Rudinsky S.Yu. Karpov H. Lipsanen A.E. Romanov
  • Year: 2015
  • Volume: 24
  • Issue: 3
  • 8
  • 1193
  • Pages: 278-283

The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures

V.N. Bessolov E.V. Konenkova A.V. Zubkova A.V. Osipov Orlova T.S. S.N. Rodin S.A. Kukushkin
  • Year: 2014
  • Volume: 21
  • Issue: 3
  • 8
  • 1274
  • Pages: 266-274