GaN growth ON β-Ga2O3 substrates by HVPE

GaN growth ON β-Ga2O3 substrates by HVPE

Authors:

V.M. Krymov S.I. Stepanov N.K. Zhumashev V.E. Bougrov A.E. Romanov V.I. Nikolaev A.I. Pechnikov V.N. Maslov A.A. Golovatenko

Abstract:

Gallium oxide β-Ga₂O₃ crystals were grown by a seedless crystallization from a Ga₂O₃-Al₂O₃ melt. Platelets with (100) orientation were produced by cleaving of the β-Ga₂O₃ ingot. These platelets were employed as substrates for GaN deposition by HVPE. Properties of the β-Ga₂O₃ crystals and GaN epitaxial layers on β-Ga₂O₃ substrates were studied.