MPM
Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
en Английский
  • en Русский
Version for the visually impaired
  • Journal Information
    • Menu
    • General Information
    • Editorial Board
    • Journal Metrics
  • Guide for Authors
    • Menu
    • Article Title
    • Keywords
    • Abstract
    • Contents and Structure
    • References
    • Formatting Guidelines
    • Submission Process
    • Peer review
  • Guide for Reviewers
  • Publication Ethics
  • All Issues
  • News
  • Contacts
Author A.A. Golovatenko
Submit Your Paper
Latest issues
  • 2023, Volume 51 Issue 1
  • 2022, Volume 50 Issue 3
  • 2022, Volume 50 Issue 2
  • 2022, Volume 50 Issue 1
A.A. Golovatenko
  • Affiliation
    Ioffe Institute
  • St.Petersburg, Russia

Thick GaN layers on silicon substrate

Sh.Sh. Sharofidinov A.A. Golovatenko I.P. Nikitina N.V. Seredova M.G. Mynbaeva V.E. Bougrov M.A. Odnoblyudov S.I. Stepanov V.I. Nikolaev
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 5
  • 605
  • Pages: 53-58

GaN growth ON β-Ga2O3 substrates by HVPE

V.I. Nikolaev A.I. Pechnikov V.N. Maslov A.A. Golovatenko V.M. Krymov S.I. Stepanov N.K. Zhumashev V.E. Bougrov A.E. Romanov
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 9
  • 723
  • Pages: 59-58
Materials physics and mechanics

Site development: DoAIT, Media Center of SPbPU

Privacy policy

Contact Us
  • aud. 227a, 29, Polytechnicheskaya str., St.Petersburg, Russia
  • decodeText
  • decodeText
  • decodeDefault