GaN growth ON β-Ga2O3 substrates by HVPE


Gallium oxide β-Ga2O3 crystals were grown by a seedless crystallization from a Ga2O3-Al2O3 melt. Platelets with (100) orientation were produced by cleaving of the β-Ga2O3 ingot. These platelets were employed as substrates for GaN deposition by HVPE. Properties of the β-Ga2O3 crystals and GaN epitaxial layers on β-Ga2O3 substrates were studied.