MPM
Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
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Author Sharkov
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Sharkov
Sharkov
Affiliation
Ioffe Institute
St.Petersburg, Russia

Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates

V.V. Kidalov S.A. Kukushkin A.V. Osipov A.V. Redkov A.S. Grashchenko I.P. Soshnikov M.E. Boiko M.D. Sharkov A.F. Dyadenchuk
  • Year: 2018
  • Volume: 36
  • Issue: 1
  • 49
  • 3571
  • Pages: 39-52

The analysis of the etch pits parameters in the (-201) plane of the β-Ga2O3 substrate crystals

Zarichny A.A. P.N. Butenko M.E. Boiko M.D. Sharkov V.I. Nikolaev
  • Year: 2023
  • Volume: 51
  • Issue: 3
  • 39
  • 1940
  • Pages: 46-51

Tribological characteristics of bulk (-201) β-Ga2O3 substrate crystals grown by EFG

P.N. Butenko M.E. Boiko A.V. Chikiryaka Guzilova L.I. Pozdnyakov A.O. M.D. Sharkov Almaev A.V. V.I. Nikolaev
  • Year: 2023
  • Volume: 51
  • Issue: 6
  • 37
  • 1817
  • Pages: 135-144

Spalling-induced β-Ga2O3 lift-off protocol

P.N. Butenko A.V. Chikiryaka M.E. Boiko Guzilova L.I. V.M. Krymov Obidov B.A. R.B.Timashov Shapenkov S.V. M.D. Sharkov V.I. Nikolaev
  • Year: 2024
  • Volume: 52
  • Issue: 5
  • 24
  • 2851
  • Pages: 55-63