S.A. Kukushkin
-
AffiliationInstitute of Problems of Mechanical Engineering RAS
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DegreeDoctor of Physics and Mathematics
- St.Petersburg, Russia
Latest issues
- 2024, Volume 52 Issue 4
- 2024, Volume 52 Issue 3
- 2024, Volume 52 Issue 2
- 2024, Volume 52 Issue 1
A Mathematical Model Of Metal Films Deposition from Photoactive Compound Solutions on Solid-Liquid Interface
- Year: 2000
- Volume: 1
- Issue: 1
- 1
- 1212
- Pages: 28-30
Critical Current Density in Polycrystalline High-Tc Superconductors with Disordered Tilt Boundaries
- Year: 2000
- Volume: 1
- Issue: 1
- 1
- 1202
- Pages: 49-53
On the Theory of Island Films Growth from Eutectic Melt at the Late Evolution Stage
- Year: 2000
- Volume: 1
- Issue: 2
- 1
- 1216
- Pages: 111-118
Heteroepitaxy of Gallium Nitride Layers: the Role of Initial Stages in Film Formation
- Year: 2003
- Volume: 6
- Issue: 1
- 6
- 1117
- Pages: 1-12
Semipolar GaN on Si(001): the role of SiC buffer layer synthesized by method of substrate atom substitution
- Year: 2014
- Volume: 21
- Issue: 1
- 5
- 1086
- Pages: 71-77
The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures
- Year: 2014
- Volume: 21
- Issue: 3
- 8
- 1274
- Pages: 266-274
Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitution in Si crystal lattice
- Year: 2015
- Volume: 22
- Issue: 2
- 8
- 1214
- Pages: 183-190
Microhardness study of two-layer nanostructures by a nanoindentation method
- Year: 2015
- Volume: 24
- Issue: 1
- 3
- 1144
- Pages: 35-40
Ab initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals upon large strainse
- Year: 2016
- Volume: 29
- Issue: 1
- 9
- 1271
- Pages: 1-16
Evolution of crystal morphology under flow of low-energy particles: vacancy mechanism
- Year: 2016
- Volume: 29
- Issue: 1
- 3
- 1272
- Pages: 82-92
Nucleation of nanopores in glass optical fibers under influence of tensile stress: experiment
- Year: 2016
- Volume: 29
- Issue: 2
- 4
- 1249
- Pages: 125-132
Formation mechanisms and the orientation of self-polarization in PZT polycristalline thin films
- Year: 2017
- Volume: 30
- Issue: 1
- 5
- 1268
- Pages: 20-34
Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces
- Year: 2017
- Volume: 32
- Issue: 2
- 6
- 1625
- Pages: 108-116
Nucleation and growth mechanisms of CdTe thin films on silicon substrates with silicon carbide buffer layers
- Year: 2017
- Volume: 32
- Issue: 3
- 2
- 1201
- Pages: 262-271
Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates
- Year: 2018
- Volume: 36
- Issue: 1
- 37
- 1643
- Pages: 39-52
Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates
- Year: 2019
- Volume: 42
- Issue: 1
- 7
- 1480
- Pages: 30-39
Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal
- Year: 2019
- Volume: 42
- Issue: 2
- 8
- 1493
- Pages: 178-182
Room-temperature quantum oscillations of static magnetic susceptibility of silicon-carbide epitaxial layers grown on a silicon substrate by the method of the coordinated substitution of atoms
- Year: 2022
- Volume: 50
- Issue: 1
- 36
- 1019
- Pages: 66-73