MPM
Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
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Author Golovatenko
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Golovatenko
Golovatenko
Affiliation
Ioffe Institute
St.Petersburg, Russia

Thick GaN layers on silicon substrate

Sh.Sh. Sharofidinov A.A. Golovatenko I.P. Nikitina N.V. Seredova M.G. Mynbaeva V.E. Bougrov M.A. Odnoblyudov S.I. Stepanov V.I. Nikolaev
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 7
  • 1977
  • Pages: 53-58

GaN growth ON β-Ga2O3 substrates by HVPE

V.I. Nikolaev A.I. Pechnikov V.N. Maslov A.A. Golovatenko V.M. Krymov S.I. Stepanov N.K. Zhumashev V.E. Bougrov Romanov A.E.
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 14
  • 2283
  • Pages: 59-58