MPM
Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
en Английский
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Author A.A. Golovatenko
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A.A. Golovatenko
  • Affiliation
    Ioffe Institute
  • St.Petersburg, Russia

Thick GaN layers on silicon substrate

Sh.Sh. Sharofidinov A.A. Golovatenko I.P. Nikitina N.V. Seredova M.G. Mynbaeva V.E. Bougrov M.A. Odnoblyudov S.I. Stepanov V.I. Nikolaev
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 6
  • 1154
  • Pages: 53-58

GaN growth ON β-Ga2O3 substrates by HVPE

V.I. Nikolaev A.I. Pechnikov V.N. Maslov A.A. Golovatenko V.M. Krymov S.I. Stepanov N.K. Zhumashev V.E. Bougrov A.E. Romanov
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 12
  • 1318
  • Pages: 59-58