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Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
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Pechnikov
Pechnikov
Affiliation
Ioffe Institute
St.Petersburg, Russia

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

M.G. Mynbaeva A.I. Pechnikov Sh.Sh. Sharofidinov V.E. Bougrov K.D. Mynbaev S.I. Stepanov M.A. Odnoblyudov V.I. Nikolaev Romanov A.E.
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 3
  • 2172
  • Pages: 30-38

GaN growth ON β-Ga2O3 substrates by HVPE

V.I. Nikolaev A.I. Pechnikov V.N. Maslov A.A. Golovatenko V.M. Krymov S.I. Stepanov N.K. Zhumashev V.E. Bougrov Romanov A.E.
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 14
  • 2283
  • Pages: 59-58

Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates

M.G. Mynbaeva A.I. Pechnikov A.N. Smirnov D.A. Kirilenko S.Ch. Raufov A.A. Sitnikova M.A. Odnoblyudov V.E. Bougrov K.D. Mynbaev V.I. Nikolaev Romanov A.E.
  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 9
  • 2238
  • Pages: 24-31

Study of β-Ga2O3 epitaxial layers and single crystals by nanoindentation technique

Guzilova L.I. A.S. Grashchenko A.I. Pechnikov V.N. Maslov D.V. Zav'yalov V.L. Abdrachmanov Romanov A.E. V.I. Nikolaev
  • Year: 2016
  • Volume: 29
  • Issue: 2
  • 61
  • 3101
  • Pages: 166-171

Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

A.V. Kremleva D.A. Kirilenko V.I. Nikolaev A.I. Pechnikov S.I. Stepanov M.A. Odnoblyudov V.E. Bougrov Romanov A.E.
  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 9
  • 2373
  • Pages: 178-185

Wear resistance of α- and β- gallium oxide coatings

P.N. Butenko Guzilova L.I. A.V. Chikiryaka A.I. Pechnikov A.S. Grashchenko Pozdnyakov A.O. V.I. Nikolaev
  • Year: 2021
  • Volume: 47
  • Issue: 1
  • 52
  • 2378
  • Pages: 52-58

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

S.I. Stepanov V.I. Nikolaev Almaev A.V. A.I. Pechnikov Scheglov M.P. A.V. Chikiryaka Kushnarev B.O. Polyakov A.Y.
  • Year: 2021
  • Volume: 47
  • Issue: 4
  • 105
  • 2889
  • Pages: 577-581

Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity

Yakovlev N.N. Almaev A.V. P.N. Butenko Mikhaylov A.N. A.I. Pechnikov S.I. Stepanov R.B.Timashov A.V. Chikiryaka V.I. Nikolaev
  • Year: 2022
  • Volume: 48
  • Issue: 3
  • 88
  • 1771
  • Pages: 301-307

Epitaxial stabilization of α-Ga2O3 layers grown on r-plane sapphire

V.I. Nikolaev Polyakov A.Y. S.I. Stepanov A.I. Pechnikov Guzilova L.I. Scheglov M.P. A.V. Chikiryaka
  • Year: 2023
  • Volume: 51
  • Issue: 1
  • 120
  • 1864
  • Pages: 1-9