MPM
Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
en Английский
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Since 2000
ISSN 1605-8119
Author A.I. Pechnikov
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A.I. Pechnikov
  • Affiliation
    Ioffe Institute
  • St.Petersburg, Russia

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

M.G. Mynbaeva A.I. Pechnikov Sh.Sh. Sharofidinov V.E. Bougrov K.D. Mynbaev S.I. Stepanov M.A. Odnoblyudov V.I. Nikolaev A.E. Romanov
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 2
  • 1442
  • Pages: 30-38

GaN growth ON β-Ga2O3 substrates by HVPE

V.I. Nikolaev A.I. Pechnikov V.N. Maslov A.A. Golovatenko V.M. Krymov S.I. Stepanov N.K. Zhumashev V.E. Bougrov A.E. Romanov
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 13
  • 1512
  • Pages: 59-58

Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates

M.G. Mynbaeva A.I. Pechnikov A.N. Smirnov D.A. Kirilenko S.Ch. Raufov A.A. Sitnikova M.A. Odnoblyudov V.E. Bougrov K.D. Mynbaev V.I. Nikolaev A.E. Romanov
  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 8
  • 1472
  • Pages: 24-31

Study of β-Ga2O3 epitaxial layers and single crystals by nanoindentation technique

L.I. Guzilova A.S. Grashchenko A.I. Pechnikov V.N. Maslov D.V. Zav'yalov V.L. Abdrachmanov A.E. Romanov V.I. Nikolaev
  • Year: 2016
  • Volume: 29
  • Issue: 2
  • 55
  • 2259
  • Pages: 166-171

Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

A.V. Kremleva D.A. Kirilenko V.I. Nikolaev A.I. Pechnikov S.I. Stepanov M.A. Odnoblyudov V.E. Bougrov A.E. Romanov
  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 8
  • 1537
  • Pages: 178-185

Wear resistance of α- and β- gallium oxide coatings

P.N. Butenko L.I. Guzilova A.V. Chikiryaka A.I. Pechnikov A.S. Grashchenko Pozdnyakov A.O. V.I. Nikolaev
  • Year: 2021
  • Volume: 47
  • Issue: 1
  • 51
  • 1492
  • Pages: 52-58

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

S.I. Stepanov V.I. Nikolaev Almaev A.V. A.I. Pechnikov Scheglov M.P. A.V. Chikiryaka Kushnarev B.O. Polyakov A.Y.
  • Year: 2021
  • Volume: 47
  • Issue: 4
  • 91
  • 2076
  • Pages: 577-581

Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity

Yakovlev N.N. Almaev A.V. P.N. Butenko Mikhaylov A.N. A.I. Pechnikov S.I. Stepanov R.B.Timashov A.V. Chikiryaka V.I. Nikolaev
  • Year: 2022
  • Volume: 48
  • Issue: 3
  • 86
  • 1153
  • Pages: 301-307

Epitaxial stabilization of α-Ga2O3 layers grown on r-plane sapphire

V.I. Nikolaev Polyakov A.Y. S.I. Stepanov A.I. Pechnikov L.I. Guzilova Scheglov M.P. A.V. Chikiryaka
  • Year: 2023
  • Volume: 51
  • Issue: 1
  • 108
  • 1080
  • Pages: 1-9

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