MPM
Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
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Author S.I. Stepanov
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S.I. Stepanov
  • Affiliation
    Ioffe Institute
  • St.Petersburg, Russia

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

M.G. Mynbaeva A.I. Pechnikov Sh.Sh. Sharofidinov V.E. Bougrov K.D. Mynbaev S.I. Stepanov M.A. Odnoblyudov V.I. Nikolaev A.E. Romanov
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 2
  • 1286
  • Pages: 30-38

Thick GaN layers on silicon substrate

Sh.Sh. Sharofidinov A.A. Golovatenko I.P. Nikitina N.V. Seredova M.G. Mynbaeva V.E. Bougrov M.A. Odnoblyudov S.I. Stepanov V.I. Nikolaev
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 6
  • 1154
  • Pages: 53-58

GaN growth ON β-Ga2O3 substrates by HVPE

V.I. Nikolaev A.I. Pechnikov V.N. Maslov A.A. Golovatenko V.M. Krymov S.I. Stepanov N.K. Zhumashev V.E. Bougrov A.E. Romanov
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 12
  • 1318
  • Pages: 59-58

Shape memory Cu-Al-Ni single crystals for application in rotary actuators

A.I. Priadko V.I. Nikolaev S.A. Pulnev S.I. Stepanov A.V. Rogov A.V. Chikiryaka O.A. Shmakov
  • Year: 2017
  • Volume: 32
  • Issue: 1
  • 13
  • 1245
  • Pages: 83-87

Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

A.V. Kremleva D.A. Kirilenko V.I. Nikolaev A.I. Pechnikov S.I. Stepanov M.A. Odnoblyudov V.E. Bougrov A.E. Romanov
  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 8
  • 1386
  • Pages: 178-185

Burst-like shape memory recovery and calorimetric effect in Cu-Al-Ni alloy single crystals at cyclic test

L.I. Guzilova V.I. Nikolaev P.N. Yakushev S.I. Stepanov R.B.Timashov A.V. Chikiryaka S.A. Pulnev
  • Year: 2020
  • Volume: 46
  • Issue: 1
  • 39
  • 1239
  • Pages: 42-49

Jumping at strain recovery in shape memory Cu-Al-Ni single crystals

V.I. Nikolaev R.B.Timashov S.A. Pulnev L.I. Guzilova P.N. Butenko S.I. Stepanov
  • Year: 2021
  • Volume: 47
  • Issue: 1
  • 53
  • 1389
  • Pages: 59-64

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

S.I. Stepanov V.I. Nikolaev Almaev A.V. A.I. Pechnikov Scheglov M.P. A.V. Chikiryaka Kushnarev B.O. Polyakov A.Y.
  • Year: 2021
  • Volume: 47
  • Issue: 4
  • 86
  • 1907
  • Pages: 577-581

Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity

Yakovlev N.N. Almaev A.V. P.N. Butenko Mikhaylov A.N. A.I. Pechnikov S.I. Stepanov R.B.Timashov A.V. Chikiryaka V.I. Nikolaev
  • Year: 2022
  • Volume: 48
  • Issue: 3
  • 84
  • 1021
  • Pages: 301-307

Epitaxial stabilization of α-Ga2O3 layers grown on r-plane sapphire

V.I. Nikolaev Polyakov A.Y. S.I. Stepanov A.I. Pechnikov L.I. Guzilova Scheglov M.P. A.V. Chikiryaka
  • Year: 2023
  • Volume: 51
  • Issue: 1
  • 104
  • 950
  • Pages: 1-9