MPM
Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
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Author Stepanov
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Stepanov
Stepanov
Affiliation
Ioffe Institute
St.Petersburg, Russia

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

M.G. Mynbaeva A.I. Pechnikov Sh.Sh. Sharofidinov V.E. Bougrov K.D. Mynbaev S.I. Stepanov M.A. Odnoblyudov V.I. Nikolaev Romanov A.E.
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 3
  • 2174
  • Pages: 30-38

Thick GaN layers on silicon substrate

Sh.Sh. Sharofidinov A.A. Golovatenko I.P. Nikitina N.V. Seredova M.G. Mynbaeva V.E. Bougrov M.A. Odnoblyudov S.I. Stepanov V.I. Nikolaev
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 7
  • 1979
  • Pages: 53-58

GaN growth ON β-Ga2O3 substrates by HVPE

V.I. Nikolaev A.I. Pechnikov V.N. Maslov A.A. Golovatenko V.M. Krymov S.I. Stepanov N.K. Zhumashev V.E. Bougrov Romanov A.E.
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 14
  • 2285
  • Pages: 59-58

Shape memory Cu-Al-Ni single crystals for application in rotary actuators

A.I. Priadko V.I. Nikolaev S.A. Pulnev S.I. Stepanov A.V. Rogov A.V. Chikiryaka O.A. Shmakov
  • Year: 2017
  • Volume: 32
  • Issue: 1
  • 14
  • 2065
  • Pages: 83-87

Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

A.V. Kremleva D.A. Kirilenko V.I. Nikolaev A.I. Pechnikov S.I. Stepanov M.A. Odnoblyudov V.E. Bougrov Romanov A.E.
  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 9
  • 2376
  • Pages: 178-185

Burst-like shape memory recovery and calorimetric effect in Cu-Al-Ni alloy single crystals at cyclic test

Guzilova L.I. V.I. Nikolaev P.N. Yakushev S.I. Stepanov R.B.Timashov A.V. Chikiryaka S.A. Pulnev
  • Year: 2020
  • Volume: 46
  • Issue: 1
  • 45
  • 2230
  • Pages: 42-49

Jumping at strain recovery in shape memory Cu-Al-Ni single crystals

V.I. Nikolaev R.B.Timashov S.A. Pulnev Guzilova L.I. P.N. Butenko S.I. Stepanov
  • Year: 2021
  • Volume: 47
  • Issue: 1
  • 59
  • 2327
  • Pages: 59-64

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

S.I. Stepanov V.I. Nikolaev Almaev A.V. A.I. Pechnikov Scheglov M.P. A.V. Chikiryaka Kushnarev B.O. Polyakov A.Y.
  • Year: 2021
  • Volume: 47
  • Issue: 4
  • 105
  • 2893
  • Pages: 577-581

Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity

Yakovlev N.N. Almaev A.V. P.N. Butenko Mikhaylov A.N. A.I. Pechnikov S.I. Stepanov R.B.Timashov A.V. Chikiryaka V.I. Nikolaev
  • Year: 2022
  • Volume: 48
  • Issue: 3
  • 88
  • 1773
  • Pages: 301-307

Epitaxial stabilization of α-Ga2O3 layers grown on r-plane sapphire

V.I. Nikolaev Polyakov A.Y. S.I. Stepanov A.I. Pechnikov Guzilova L.I. Scheglov M.P. A.V. Chikiryaka
  • Year: 2023
  • Volume: 51
  • Issue: 1
  • 120
  • 1867
  • Pages: 1-9