Articles by keywords "semiconductor"
Band gap engineering with strains induced by quantum dots in semiconductors nanowires
- Year: 2025
- Volume: 53
- Issue: 5
- 12
- 86
- Pages: 42-49
The analysis of the etch pits parameters in the (-201) plane of the β-Ga2O3 substrate crystals
- Year: 2023
- Volume: 51
- Issue: 3
- 38
- 1593
- Pages: 46-51
Thin films of gallium oxide obtained by spray-pyrolysis: method and properties
- Year: 2022
- Volume: 50
- Issue: 1
- 89
- 2299
- Pages: 107-117
Ab initio calculations of electronic band structure of ideal and defective CdMnS
- Year: 2022
- Volume: 48
- Issue: 3
- 22
- 1770
- Pages: 419-427
On physical properties of few-photon detectors based on structures with micropillars
- Year: 2021
- Volume: 47
- Issue: 6
- 42
- 2389
- Pages: 978-986
Growth of thick gallium oxide on the various substrates by halide vapor phase epitaxy
- Year: 2020
- Volume: 44
- Issue: 2
- 65
- 3052
- Pages: 164-171
Quantum chemical modeling bismuth-based clusters
- Year: 2020
- Volume: 43
- Issue: 1
- 44
- 2510
- Pages: 72-83
Structural characterization of bulk (AlXGa1-X)2O3 crystals grown by the ózochralski method
- Year: 2019
- Volume: 42
- Issue: 6
- 12
- 2783
- Pages: 797-801
Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces
- Year: 2017
- Volume: 32
- Issue: 2
- 7
- 2786
- Pages: 108-116
Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors
- Year: 2015
- Volume: 24
- Issue: 2
- 33
- 2613
- Pages: 194-200
The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures
- Year: 2014
- Volume: 21
- Issue: 3
- 9
- 2278
- Pages: 266-274
Negative differential resistance in ferromagnet/wide-gap semiconductor/ferromagnet nanostructure
- Year: 2014
- Volume: 20
- Issue: 2
- 5
- 2001
- Pages: 106-110
Action of Laser Radiation on Crystals of Gallium Arsenide
- Year: 2012
- Volume: 13
- Issue: 1
- 2
- 1465
- Pages: 48-50
Change of the Scattered Power of the Surface Acoustic Wave Propagating along the Surface of Gallium Arsenide in Process of Deposition of Gold Films pages
- Year: 2011
- Volume: 12
- Issue: 2
- 2
- 2068
- Pages: 174-185
Deviation of the Velocity of the Surface Acoustic Wave Propagating Along the Surface of Gallium Arsenide in the Process of Depositing of Gold
- Year: 2011
- Volume: 12
- Issue: 2
- 3
- 2160
- Pages: 161-173
Nanostructure of Metal/Semiconductor System by Synchrotron X-ray Scattering
- Year: 2001
- Volume: 4
- Issue: 1
- 3
- 1990
- Pages: 25-28
Quantum Computing in Semiconductor Structures with 0.1 µm Separation of Nuclear-spin Qubits
- Year: 2001
- Volume: 4
- Issue: 1
- 2
- 2092
- Pages: 5-7
Heteroepitaxial Growth of InAs on Si: the New Type of Quantum Dots
- Year: 2000
- Volume: 1
- Issue: 1
- 7
- 2089
- Pages: 15-19