Articles by keywords "semiconductor"
Temperature-dependent dielectric behaviour and XRD analysis of Bi2Te2.8Se0.2
- Year: 2026
- Volume: 54
- Issue: 2
- 24
- 221
- Pages: 101-110
Band gap engineering with strains induced by quantum dots in semiconductors nanowires
- Year: 2025
- Volume: 53
- Issue: 5
- 41
- 815
- Pages: 42-49
The analysis of the etch pits parameters in the (-201) plane of the β-Ga2O3 substrate crystals
- Year: 2023
- Volume: 51
- Issue: 3
- 40
- 2256
- Pages: 46-51
Thin films of gallium oxide obtained by spray-pyrolysis: method and properties
- Year: 2022
- Volume: 50
- Issue: 1
- 92
- 2939
- Pages: 107-117
Ab initio calculations of electronic band structure of ideal and defective CdMnS
- Year: 2022
- Volume: 48
- Issue: 3
- 22
- 2350
- Pages: 419-427
On physical properties of few-photon detectors based on structures with micropillars
- Year: 2021
- Volume: 47
- Issue: 6
- 42
- 2913
- Pages: 978-986
Growth of thick gallium oxide on the various substrates by halide vapor phase epitaxy
- Year: 2020
- Volume: 44
- Issue: 2
- 68
- 3708
- Pages: 164-171
Structural characterization of bulk (AlXGa1-X)2O3 crystals grown by the ózochralski method
- Year: 2019
- Volume: 42
- Issue: 6
- 12
- 3426
- Pages: 797-801
Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces
- Year: 2017
- Volume: 32
- Issue: 2
- 8
- 3426
- Pages: 108-116
Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors
- Year: 2015
- Volume: 24
- Issue: 2
- 36
- 3234
- Pages: 194-200
The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures
- Year: 2014
- Volume: 21
- Issue: 3
- 9
- 2850
- Pages: 266-274
Negative differential resistance in ferromagnet/wide-gap semiconductor/ferromagnet nanostructure
- Year: 2014
- Volume: 20
- Issue: 2
- 5
- 2545
- Pages: 106-110
Action of Laser Radiation on Crystals of Gallium Arsenide
- Year: 2012
- Volume: 13
- Issue: 1
- 2
- 1947
- Pages: 48-50
Change of the Scattered Power of the Surface Acoustic Wave Propagating along the Surface of Gallium Arsenide in Process of Deposition of Gold Films pages
- Year: 2011
- Volume: 12
- Issue: 2
- 2
- 2613
- Pages: 174-185
Deviation of the Velocity of the Surface Acoustic Wave Propagating Along the Surface of Gallium Arsenide in the Process of Depositing of Gold
- Year: 2011
- Volume: 12
- Issue: 2
- 3
- 2696
- Pages: 161-173
Nanostructure of Metal/Semiconductor System by Synchrotron X-ray Scattering
- Year: 2001
- Volume: 4
- Issue: 1
- 3
- 2503
- Pages: 25-28
Quantum Computing in Semiconductor Structures with 0.1 µm Separation of Nuclear-spin Qubits
- Year: 2001
- Volume: 4
- Issue: 1
- 2
- 2603
- Pages: 5-7
Heteroepitaxial Growth of InAs on Si: the New Type of Quantum Dots
- Year: 2000
- Volume: 1
- Issue: 1
- 11
- 2649
- Pages: 15-19