Nikolaev
Nikolaev
Affiliation
Ioffe Institute
St.Petersburg, Russia

Optimization of light extraction from power LED chip-on-board modules emitting in ultraviolet range of spectrum

  • Year: 2013
  • Volume: 17
  • Issue: 2
  • 5
  • 2019
  • Pages: 111-120

Efficiency comparison of light emitting diodes based on monochromatic chips and chips with phosphor

  • Year: 2013
  • Volume: 18
  • Issue: 2
  • 5
  • 2036
  • Pages: 135-142

Temperature stability of colored LED elements

  • Year: 2013
  • Volume: 18
  • Issue: 2
  • 3
  • 2104
  • Pages: 143-147

Single crystals of β-Ga2O3, grown from the melt of gallium and aluminum oxides

  • Year: 2014
  • Volume: 21
  • Issue: 2
  • 25
  • 2073
  • Pages: 194-199

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 3
  • 2172
  • Pages: 30-38

Thick GaN layers on silicon substrate

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 7
  • 1977
  • Pages: 53-58

GaN growth ON β-Ga2O3 substrates by HVPE

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 14
  • 2283
  • Pages: 59-58

Shape memory deformation recovery features in Cu-Al-Ni single crystals

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 20
  • 2168
  • Pages: 64-68

Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates

  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 9
  • 2238
  • Pages: 24-31

Investigation of single crystal Cu-Al-Ni alloy bending force elements for linear motors

  • Year: 2016
  • Volume: 29
  • Issue: 2
  • 11
  • 2149
  • Pages: 158-165

Study of β-Ga2O3 epitaxial layers and single crystals by nanoindentation technique

  • Year: 2016
  • Volume: 29
  • Issue: 2
  • 61
  • 3101
  • Pages: 166-171

Shape memory Cu-Al-Ni single crystals for application in rotary actuators

  • Year: 2017
  • Volume: 32
  • Issue: 1
  • 14
  • 2062
  • Pages: 83-87

Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 9
  • 2373
  • Pages: 178-185

Burst-like shape memory recovery and calorimetric effect in Cu-Al-Ni alloy single crystals at cyclic test

  • Year: 2020
  • Volume: 46
  • Issue: 1
  • 45
  • 2228
  • Pages: 42-49

Wear resistance of α- and β- gallium oxide coatings

  • Year: 2021
  • Volume: 47
  • Issue: 1
  • 52
  • 2378
  • Pages: 52-58

Jumping at strain recovery in shape memory Cu-Al-Ni single crystals

  • Year: 2021
  • Volume: 47
  • Issue: 1
  • 59
  • 2324
  • Pages: 59-64

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

  • Year: 2021
  • Volume: 47
  • Issue: 4
  • 105
  • 2888
  • Pages: 577-581

Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity

  • Year: 2022
  • Volume: 48
  • Issue: 3
  • 88
  • 1771
  • Pages: 301-307

Epitaxial stabilization of α-Ga2O3 layers grown on r-plane sapphire

  • Year: 2023
  • Volume: 51
  • Issue: 1
  • 120
  • 1864
  • Pages: 1-9

The analysis of the etch pits parameters in the (-201) plane of the β-Ga2O3 substrate crystals

  • Year: 2023
  • Volume: 51
  • Issue: 3
  • 38
  • 1440
  • Pages: 46-51

Tribological characteristics of bulk (-201) β-Ga2O3 substrate crystals grown by EFG

  • Year: 2023
  • Volume: 51
  • Issue: 6
  • 37
  • 1404
  • Pages: 135-144

Spalling-induced β-Ga2O3 lift-off protocol

  • Year: 2024
  • Volume: 52
  • Issue: 5
  • 23
  • 2409
  • Pages: 55-63