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Nikolaev
Affiliation
Ioffe Institute
St.Petersburg, Russia
Optimization of light extraction from power LED chip-on-board modules emitting in ultraviolet range of spectrum
- Year: 2013
- Volume: 17
- Issue: 2
- 5
- 2019
- Pages: 111-120
Efficiency comparison of light emitting diodes based on monochromatic chips and chips with phosphor
- Year: 2013
- Volume: 18
- Issue: 2
- 5
- 2036
- Pages: 135-142
Single crystals of β-Ga2O3, grown from the melt of gallium and aluminum oxides
- Year: 2014
- Volume: 21
- Issue: 2
- 25
- 2073
- Pages: 194-199
Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates
- Year: 2015
- Volume: 22
- Issue: 1
- 3
- 2172
- Pages: 30-38
Shape memory deformation recovery features in Cu-Al-Ni single crystals
- Year: 2015
- Volume: 22
- Issue: 1
- 20
- 2168
- Pages: 64-68
Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates
- Year: 2016
- Volume: 29
- Issue: 1
- 9
- 2238
- Pages: 24-31
Investigation of single crystal Cu-Al-Ni alloy bending force elements for linear motors
- Year: 2016
- Volume: 29
- Issue: 2
- 11
- 2149
- Pages: 158-165
Study of β-Ga2O3 epitaxial layers and single crystals by nanoindentation technique
- Year: 2016
- Volume: 29
- Issue: 2
- 61
- 3101
- Pages: 166-171
Shape memory Cu-Al-Ni single crystals for application in rotary actuators
- Year: 2017
- Volume: 32
- Issue: 1
- 14
- 2062
- Pages: 83-87
Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates
- Year: 2017
- Volume: 32
- Issue: 2
- 9
- 2373
- Pages: 178-185
Burst-like shape memory recovery and calorimetric effect in Cu-Al-Ni alloy single crystals at cyclic test
- Year: 2020
- Volume: 46
- Issue: 1
- 45
- 2228
- Pages: 42-49
Wear resistance of α- and β- gallium oxide coatings
- Year: 2021
- Volume: 47
- Issue: 1
- 52
- 2378
- Pages: 52-58
Jumping at strain recovery in shape memory Cu-Al-Ni single crystals
- Year: 2021
- Volume: 47
- Issue: 1
- 59
- 2324
- Pages: 59-64
HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer
- Year: 2021
- Volume: 47
- Issue: 4
- 105
- 2888
- Pages: 577-581
Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity
- Year: 2022
- Volume: 48
- Issue: 3
- 88
- 1771
- Pages: 301-307
Epitaxial stabilization of α-Ga2O3 layers grown on r-plane sapphire
- Year: 2023
- Volume: 51
- Issue: 1
- 120
- 1864
- Pages: 1-9
The analysis of the etch pits parameters in the (-201) plane of the β-Ga2O3 substrate crystals
- Year: 2023
- Volume: 51
- Issue: 3
- 38
- 1440
- Pages: 46-51
Tribological characteristics of bulk (-201) β-Ga2O3 substrate crystals grown by EFG
- Year: 2023
- Volume: 51
- Issue: 6
- 37
- 1404
- Pages: 135-144