Articles by keywords "epitaxy"

Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity

  • Year: 2022
  • Volume: 48
  • Issue: 3
  • 80
  • 864
  • Pages: 301-307

Growth of thick gallium oxide on the various substrates by halide vapor phase epitaxy

  • Year: 2020
  • Volume: 44
  • Issue: 2
  • 57
  • 1667
  • Pages: 164-171

On cracking in thick GaN layers grown on sapphire substrates

  • Year: 2020
  • Volume: 44
  • Issue: 1
  • 20
  • 1343
  • Pages: 1-7

Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal

  • Year: 2019
  • Volume: 42
  • Issue: 2
  • 8
  • 1292
  • Pages: 178-182

Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates

  • Year: 2019
  • Volume: 42
  • Issue: 1
  • 6
  • 1272
  • Pages: 30-39

Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates

  • Year: 2018
  • Volume: 36
  • Issue: 1
  • 32
  • 1408
  • Pages: 39-52

Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 8
  • 1222
  • Pages: 178-185

Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces

  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 6
  • 1432
  • Pages: 108-116

Photoluminescence of Hg0.5Cd0.5Te structures grown with molecular-beam epitaxy

  • Year: 2017
  • Volume: 32
  • Issue: 1
  • 3
  • 1057
  • Pages: 88-93

Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates

  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 7
  • 1153
  • Pages: 24-31

Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520-1580 nm

  • Year: 2015
  • Volume: 24
  • Issue: 3
  • 5
  • 916
  • Pages: 284-288

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 2
  • 1119
  • Pages: 30-38

Semipolar GaN on Si(001): the role of SiC buffer layer synthesized by method of substrate atom substitution

  • Year: 2014
  • Volume: 21
  • Issue: 1
  • 4
  • 945
  • Pages: 71-77

"Solution Heteroepitaxy" in the Formation of Epitaxial Films of II-VI Compounds under Highly Nonequilibrium Conditions

  • Year: 2003
  • Volume: 6
  • Issue: 1
  • 1
  • 721
  • Pages: 58-62

Heteroepitaxy of Gallium Nitride Layers: the Role of Initial Stages in Film Formation

  • Year: 2003
  • Volume: 6
  • Issue: 1
  • 6
  • 985
  • Pages: 1-12

Kinetic Pathways of the Growth Mode Transition during Ge/Si(001) Heteroepitaxy

  • Year: 2001
  • Volume: 4
  • Issue: 2
  • 2
  • 841
  • Pages: 94-100