Articles by keywords "epitaxy"
Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity
- Year: 2022
- Volume: 48
- Issue: 3
- 84
- 1033
- Pages: 301-307
Growth of thick gallium oxide on the various substrates by halide vapor phase epitaxy
- Year: 2020
- Volume: 44
- Issue: 2
- 61
- 1895
- Pages: 164-171
On cracking in thick GaN layers grown on sapphire substrates
- Year: 2020
- Volume: 44
- Issue: 1
- 25
- 1557
- Pages: 1-7
Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal
- Year: 2019
- Volume: 42
- Issue: 2
- 8
- 1507
- Pages: 178-182
Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates
- Year: 2019
- Volume: 42
- Issue: 1
- 7
- 1497
- Pages: 30-39
Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates
- Year: 2018
- Volume: 36
- Issue: 1
- 38
- 1675
- Pages: 39-52
Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates
- Year: 2017
- Volume: 32
- Issue: 2
- 8
- 1402
- Pages: 178-185
Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces
- Year: 2017
- Volume: 32
- Issue: 2
- 6
- 1644
- Pages: 108-116
Photoluminescence of Hg0.5Cd0.5Te structures grown with molecular-beam epitaxy
- Year: 2017
- Volume: 32
- Issue: 1
- 4
- 1238
- Pages: 88-93
Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates
- Year: 2016
- Volume: 29
- Issue: 1
- 8
- 1337
- Pages: 24-31
Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520-1580 nm
- Year: 2015
- Volume: 24
- Issue: 3
- 5
- 1079
- Pages: 284-288
Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates
- Year: 2015
- Volume: 22
- Issue: 1
- 2
- 1303
- Pages: 30-38
Semipolar GaN on Si(001): the role of SiC buffer layer synthesized by method of substrate atom substitution
- Year: 2014
- Volume: 21
- Issue: 1
- 5
- 1099
- Pages: 71-77
"Solution Heteroepitaxy" in the Formation of Epitaxial Films of II-VI Compounds under Highly Nonequilibrium Conditions
- Year: 2003
- Volume: 6
- Issue: 1
- 1
- 859
- Pages: 58-62
Heteroepitaxy of Gallium Nitride Layers: the Role of Initial Stages in Film Formation
- Year: 2003
- Volume: 6
- Issue: 1
- 6
- 1130
- Pages: 1-12
Kinetic Pathways of the Growth Mode Transition during Ge/Si(001) Heteroepitaxy
- Year: 2001
- Volume: 4
- Issue: 2
- 2
- 983
- Pages: 94-100