Latest issues
- 2025, Volume 53 Issue 4
- 2025, Volume 53 Issue 3
- 2025, Volume 53 Issue 2
- 2025, Volume 53 Issue 1
V.E. Bougrov
Affiliation
ITMO University
St.Petersburg, Russia
Parametric Modeling of Light Emitting Structures Based on III-Nitrides
- Year: 2012
- Volume: 14
- Issue: 1
- 7
- 2186
- Pages: 78-86
Optimization of light extraction from power LED chip-on-board modules emitting in ultraviolet range of spectrum
- Year: 2013
- Volume: 17
- Issue: 2
- 5
- 2019
- Pages: 111-120
Heat transfer simulation and retrofit LED lamp plastic heat sink material optimization
- Year: 2013
- Volume: 17
- Issue: 2
- 11
- 2102
- Pages: 178-182
Efficiency comparison of light emitting diodes based on monochromatic chips and chips with phosphor
- Year: 2013
- Volume: 18
- Issue: 2
- 5
- 2036
- Pages: 135-142
Inorganic composite «phosphor in glass» based on highly refractive LED-silicate matrix for white LEDs
- Year: 2014
- Volume: 21
- Issue: 3
- 7
- 2240
- Pages: 242-247
Thermal analysis of phosphor containing silicone layer in high power LEDs
- Year: 2014
- Volume: 21
- Issue: 3
- 3
- 2018
- Pages: 283-287
Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates
- Year: 2015
- Volume: 22
- Issue: 1
- 3
- 2172
- Pages: 30-38
Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors
- Year: 2015
- Volume: 24
- Issue: 2
- 32
- 2480
- Pages: 194-200
Simulation operation regimes of passive mode-locked laser based on InGaAlAs/InGaAs/InP heterostructures
- Year: 2016
- Volume: 27
- Issue: 1
- 3
- 1829
- Pages: 74-78
Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates
- Year: 2016
- Volume: 29
- Issue: 1
- 9
- 2238
- Pages: 24-31
Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures
- Year: 2016
- Volume: 29
- Issue: 1
- 3
- 1950
- Pages: 71-75
Electrical and optical properties of transparent conducting ZnO: Al/AgNP multilayer films
- Year: 2016
- Volume: 29
- Issue: 2
- 6
- 2192
- Pages: 145-149
Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates
- Year: 2017
- Volume: 32
- Issue: 2
- 9
- 2373
- Pages: 178-185
Study of antireflection coatings for high speed 1.3 -1.55 µm InGaAs/InP PIN photodetector
- Year: 2017
- Volume: 32
- Issue: 2
- 21
- 2325
- Pages: 194-197
Fabrication of p-type transparent oxide films with delafossite structure by sol-gel processing
- Year: 2017
- Volume: 32
- Issue: 3
- 9
- 2531
- Pages: 288-292
Relation of the optical properties of boron copper-containing glasses on the concentration of lithium
- Year: 2018
- Volume: 40
- Issue: 1
- 8
- 2262
- Pages: 78-83
The influence of gamma rays radiation on optically induced luminescence of copper-containing potassium-lithium-borate glass
- Year: 2019
- Volume: 42
- Issue: 2
- 26
- 2512
- Pages: 198-203
Structural characterization of bulk (AlXGa1-X)2O3 crystals grown by the ózochralski method
- Year: 2019
- Volume: 42
- Issue: 6
- 12
- 2648
- Pages: 797-801
Czochralski grown (AlxGa1-x)2O3 crystals with variable Al content
- Year: 2019
- Volume: 42
- Issue: 6
- 36
- 2707
- Pages: 802-807
On cracking in thick GaN layers grown on sapphire substrates
- Year: 2020
- Volume: 44
- Issue: 1
- 27
- 2557
- Pages: 1-7
Growth of thick gallium oxide on the various substrates by halide vapor phase epitaxy
- Year: 2020
- Volume: 44
- Issue: 2
- 64
- 2908
- Pages: 164-171
Multi-step dilatational inclusion in an elastically isotropic cylinder
- Year: 2021
- Volume: 47
- Issue: 5
- 41
- 2648
- Pages: 697-705
Thin films of gallium oxide obtained by spray-pyrolysis: method and properties
- Year: 2022
- Volume: 50
- Issue: 1
- 88
- 2161
- Pages: 107-117