Articles by keywords "BST"

The analysis of the etch pits parameters in the (-201) plane of the β-Ga2O3 substrate crystals

  • Year: 2023
  • Volume: 51
  • Issue: 3
  • 20
  • 295
  • Pages: 46-51

Epitaxial stabilization of α-Ga2O3 layers grown on r-plane sapphire

  • Year: 2023
  • Volume: 51
  • Issue: 1
  • 94
  • 780
  • Pages: 1-9

Physical fundamentals of thermomechanical processing in ultrafine-grained metallic materials manufacturing

  • Year: 2020
  • Volume: 43
  • Issue: 1
  • 18
  • 1241
  • Pages: 50-58

Dynamics of a frictional system, accounting for hereditary-type friction and the mobility of the vibration limiter

  • Year: 2019
  • Volume: 42
  • Issue: 6
  • 7
  • 996
  • Pages: 742-748

A synthesis of BAxSR1-xTIO3 film and characterization of ferroelectric properties and its extension as random access memory

  • Year: 2019
  • Volume: 42
  • Issue: 1
  • 13
  • 1035
  • Pages: 131-140

Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates

  • Year: 2018
  • Volume: 36
  • Issue: 1
  • 30
  • 1387
  • Pages: 39-52

Fabrication of p-type transparent oxide films with delafossite structure by sol-gel processing

  • Year: 2017
  • Volume: 32
  • Issue: 3
  • 8
  • 1352
  • Pages: 288-292

Nucleation and growth mechanisms of CdTe thin films on silicon substrates with silicon carbide buffer layers

  • Year: 2017
  • Volume: 32
  • Issue: 3
  • 2
  • 979
  • Pages: 262-271

Formation mechanisms and the orientation of self-polarization in PZT polycristalline thin films

  • Year: 2017
  • Volume: 30
  • Issue: 1
  • 5
  • 1089
  • Pages: 20-34

Technical and economic substantiation construction methods on frozen soils in the face of global warming

  • Year: 2016
  • Volume: 26
  • Issue: 1
  • 1
  • 860
  • Pages: 89-92

Technical and economic substantiation of permafrost thermal stabilization technology under global warming conditions

  • Year: 2016
  • Volume: 26
  • Issue: 1
  • 3
  • 876
  • Pages: 85-88

Critical thickness and bow of pseudomorphic InxGa1-xAs-based laser heterostructures grown on (001)GaAs and (001)InP substrates

  • Year: 2015
  • Volume: 24
  • Issue: 3
  • 8
  • 1009
  • Pages: 278-283

Microhardness study of two-layer nanostructures by a nanoindentation method

  • Year: 2015
  • Volume: 24
  • Issue: 1
  • 3
  • 981
  • Pages: 35-40

GaN growth ON β-Ga2O3 substrates by HVPE

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 12
  • 1127
  • Pages: 59-58

Thick GaN layers on silicon substrate

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 6
  • 969
  • Pages: 53-58

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 2
  • 1095
  • Pages: 30-38

On the Nature of Layer Substructure of Doped Silicon Films

  • Year: 2004
  • Volume: 7
  • Issue: 1
  • 1
  • 808
  • Pages: 67-71

Nano-islands on Plastically Deformed Substrates with Disclinations

  • Year: 2000
  • Volume: 2
  • Issue: 1
  • 1
  • 1084
  • Pages: 31-36