Articles by keywords "Silicon"
Magnetism of the hybrid SiC/Si structure grown on silicon surface
Romanov V.V.
Rul' N.I.
Gasumyants V.E.
Venevtsev I.D.
K.B. Taranets
Korolev A.V.
S.A. Kukushkin
A.V. Osipov
Bagraev N.T.
- Year: 2025
- Volume: 53
- Issue: 1
- 58
- 2564
- Pages: 159-164
Field dependences of the magnetization of the hybrid SiC/Si structure grown by the vacancy method of coordinated substitution of atoms
- Year: 2024
- Volume: 52
- Issue: 6
- 125
- 2671
- Pages: 1-7
Gas phase large-scale synthesis of Silicon carbide nanowires by industrial electron accelerator
- Year: 2023
- Volume: 51
- Issue: 4
- 25
- 1272
- Pages: 96-106
Spin transistor effect in edge channels of silicon nanosandwiches
- Year: 2023
- Volume: 51
- Issue: 4
- 10
- 1177
- Pages: 85-95
Macroscopic quantum effects of electromagnetic induction in silicon nanostructures
- Year: 2022
- Volume: 50
- Issue: 2
- 13
- 1439
- Pages: 252-265
Room-temperature quantum oscillations of static magnetic susceptibility of silicon-carbide epitaxial layers grown on a silicon substrate by the method of the coordinated substitution of atoms
- Year: 2022
- Volume: 50
- Issue: 1
- 41
- 1878
- Pages: 66-73
Terahertz emitters based on negative-U materials for medical applications
Bagraev N.T.
P.A. Golovin
V.S. Khromov
Klyachkin L.E.
Malyarenko A.M.
V.A. Mashkov
B.A. Novikov
A.P. Presnukhina
A.S. Reukov
K.B. Taranets
- Year: 2020
- Volume: 44
- Issue: 2
- 26
- 2345
- Pages: 264-270
Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal
- Year: 2019
- Volume: 42
- Issue: 2
- 11
- 2402
- Pages: 178-182
Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates
- Year: 2019
- Volume: 42
- Issue: 1
- 11
- 2485
- Pages: 30-39
Geometry of GaAs nanowire seeds in SiOx/Si (111) templates
- Year: 2019
- Volume: 42
- Issue: 1
- 10
- 2087
- Pages: 14-19
Effect of anodic voltage on parameters of porous alumina formed in sulfuric acid electrolytes
X. Huang
W. Su
L. Sun
J. Liu
D.A. Sasinovich
O.V. Kupreeva
D.A. Tsirkunov
G.G. Rabatuev
S.K. Lazarouk
- Year: 2019
- Volume: 41
- Issue: 1
- 14
- 2077
- Pages: 62-68
Mechanical impulse enhancement in a microsystem based on nanoporous silicon combustion
- Year: 2019
- Volume: 41
- Issue: 1
- 8
- 2022
- Pages: 8-14
Emission properties of an array of silicon nanocones
- Year: 2018
- Volume: 39
- Issue: 1
- 4
- 1875
- Pages: 75-80
Effect of PECVD conditions on mechanical stress of silicon films
- Year: 2018
- Volume: 37
- Issue: 1
- 19
- 1975
- Pages: 67-72
Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates
V.V. Kidalov
S.A. Kukushkin
A.V. Osipov
A.V. Redkov
A.S. Grashchenko
I.P. Soshnikov
M.E. Boiko
M.D. Sharkov
A.F. Dyadenchuk
- Year: 2018
- Volume: 36
- Issue: 1
- 48
- 2966
- Pages: 39-52
Nucleation and growth mechanisms of CdTe thin films on silicon substrates with silicon carbide buffer layers
- Year: 2017
- Volume: 32
- Issue: 3
- 3
- 2140
- Pages: 262-271
Study of antireflection coatings for high speed 1.3 -1.55 µm InGaAs/InP PIN photodetector
E.S. Kolodeznyi
I.I. Novikov
A.G. Gladyshev
S.S. Rochas
K.D. Sharipo
L.Ya. Karachinsky
A.Yu. Egorov
V.E. Bougrov
- Year: 2017
- Volume: 32
- Issue: 2
- 21
- 2328
- Pages: 194-197
Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces
- Year: 2017
- Volume: 32
- Issue: 2
- 7
- 2658
- Pages: 108-116
Formation mechanisms and the orientation of self-polarization in PZT polycristalline thin films
I.P. Pronin
S.A. Kukushkin
V.V. Spirin
S.V. Senkevich
E.Yu. Kaptelov
D.M. Dolgintsev
V.P. Pronin
D.A. Kiselev
O.N. Sergeeva
- Year: 2017
- Volume: 30
- Issue: 1
- 14
- 2220
- Pages: 20-34
Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitution in Si crystal lattice
G.V. Benemanskaya
P.A. Dementev
S.A. Kukushkin
M.N. Lapushkin
A.V. Osipov
B. Senkovskiy
S.N. Timoshnev
- Year: 2015
- Volume: 22
- Issue: 2
- 9
- 2040
- Pages: 183-190
Thick GaN layers on silicon substrate
Sh.Sh. Sharofidinov
A.A. Golovatenko
I.P. Nikitina
N.V. Seredova
M.G. Mynbaeva
V.E. Bougrov
M.A. Odnoblyudov
S.I. Stepanov
V.I. Nikolaev
- Year: 2015
- Volume: 22
- Issue: 1
- 7
- 1979
- Pages: 53-58
Thermal analysis of phosphor containing silicone layer in high power LEDs
- Year: 2014
- Volume: 21
- Issue: 3
- 3
- 2021
- Pages: 283-287
The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures
- Year: 2014
- Volume: 21
- Issue: 3
- 9
- 2154
- Pages: 266-274
On the Nature of Layer Substructure of Doped Silicon Films
- Year: 2004
- Volume: 7
- Issue: 1
- 2
- 1717
- Pages: 67-71
Nanostructured Layers in High Temperature - Pressure Treated Silicon Implanted with Hydrogen / Helium
- Year: 2002
- Volume: 5
- Issue: 1
- 3
- 1718
- Pages: 31-38
Synthesis of Porous Silicon Nanostructures for Photoluminescent Devices
- Year: 2001
- Volume: 4
- Issue: 2
- 3
- 1960
- Pages: 143-147
Photoluminescence from SiC Nanocrystals Embedded in SiO2
- Year: 2001
- Volume: 4
- Issue: 2
- 6
- 1951
- Pages: 85-88
Applicability of Alkyl Monolayers on Si(111) Towards Practical Nano-scale Fabrication
- Year: 2001
- Volume: 4
- Issue: 1
- 2
- 1763
- Pages: 67-70
High Pressure; High Temperature Treatment to Create Oxygen Nano-Clusters and Defects in Single Crystalline Silicon
- Year: 2000
- Volume: 1
- Issue: 2
- 3
- 1854
- Pages: 119-126
Hot Wire CVD of Heterogeneous and Polycrystalline Silicon Semiconducting Thin Films for Applications in Thin Film Transistors and Solar Cells
- Year: 2000
- Volume: 1
- Issue: 2
- 7
- 2243
- Pages: 73-82