Articles by keywords "Silicon"
Field dependences of the magnetization of the hybrid SiC/Si structure grown by the vacancy method of coordinated substitution of atoms
- Year: 2024
- Volume: 52
- Issue: 6
- 87
- 491
- Pages: 1-7
Formation and stability of β-Si3N4 and Si2N2O phases in composite materials during mechanochemical treatment of powder mixtures including silicon, Taunite-M and nitrogen-containing components
- Year: 2024
- Volume: 52
- Issue: 2
- 31
- 616
- Pages: 56-63
Gas phase large-scale synthesis of Silicon carbide nanowires by industrial electron accelerator
- Year: 2023
- Volume: 51
- Issue: 4
- 21
- 626
- Pages: 96-106
Spin transistor effect in edge channels of silicon nanosandwiches
- Year: 2023
- Volume: 51
- Issue: 4
- 9
- 568
- Pages: 85-95
Macroscopic quantum effects of electromagnetic induction in silicon nanostructures
- Year: 2022
- Volume: 50
- Issue: 2
- 11
- 780
- Pages: 252-265
Room-temperature quantum oscillations of static magnetic susceptibility of silicon-carbide epitaxial layers grown on a silicon substrate by the method of the coordinated substitution of atoms
- Year: 2022
- Volume: 50
- Issue: 1
- 38
- 1178
- Pages: 66-73
Terahertz emitters based on negative-U materials for medical applications
- Year: 2020
- Volume: 44
- Issue: 2
- 26
- 1580
- Pages: 264-270
Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal
- Year: 2019
- Volume: 42
- Issue: 2
- 8
- 1670
- Pages: 178-182
Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates
- Year: 2019
- Volume: 42
- Issue: 1
- 7
- 1675
- Pages: 30-39
Geometry of GaAs nanowire seeds in SiOx/Si (111) templates
- Year: 2019
- Volume: 42
- Issue: 1
- 7
- 1419
- Pages: 14-19
Effect of anodic voltage on parameters of porous alumina formed in sulfuric acid electrolytes
- Year: 2019
- Volume: 41
- Issue: 1
- 12
- 1443
- Pages: 62-68
Mechanical impulse enhancement in a microsystem based on nanoporous silicon combustion
- Year: 2019
- Volume: 41
- Issue: 1
- 8
- 1386
- Pages: 8-14
Emission properties of an array of silicon nanocones
- Year: 2018
- Volume: 39
- Issue: 1
- 4
- 1296
- Pages: 75-80
Effect of PECVD conditions on mechanical stress of silicon films
- Year: 2018
- Volume: 37
- Issue: 1
- 18
- 1354
- Pages: 67-72
Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates
- Year: 2018
- Volume: 36
- Issue: 1
- 40
- 1979
- Pages: 39-52
Nucleation and growth mechanisms of CdTe thin films on silicon substrates with silicon carbide buffer layers
- Year: 2017
- Volume: 32
- Issue: 3
- 2
- 1377
- Pages: 262-271
Study of antireflection coatings for high speed 1.3 -1.55 µm InGaAs/InP PIN photodetector
- Year: 2017
- Volume: 32
- Issue: 2
- 18
- 1595
- Pages: 194-197
Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces
- Year: 2017
- Volume: 32
- Issue: 2
- 6
- 1914
- Pages: 108-116
Formation mechanisms and the orientation of self-polarization in PZT polycristalline thin films
- Year: 2017
- Volume: 30
- Issue: 1
- 6
- 1454
- Pages: 20-34
Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitution in Si crystal lattice
- Year: 2015
- Volume: 22
- Issue: 2
- 8
- 1374
- Pages: 183-190
Thermal analysis of phosphor containing silicone layer in high power LEDs
- Year: 2014
- Volume: 21
- Issue: 3
- 2
- 1357
- Pages: 283-287
The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures
- Year: 2014
- Volume: 21
- Issue: 3
- 8
- 1445
- Pages: 266-274
On the Nature of Layer Substructure of Doped Silicon Films
- Year: 2004
- Volume: 7
- Issue: 1
- 1
- 1114
- Pages: 67-71
Nanostructured Layers in High Temperature - Pressure Treated Silicon Implanted with Hydrogen / Helium
- Year: 2002
- Volume: 5
- Issue: 1
- 2
- 1159
- Pages: 31-38
Synthesis of Porous Silicon Nanostructures for Photoluminescent Devices
- Year: 2001
- Volume: 4
- Issue: 2
- 2
- 1340
- Pages: 143-147
Photoluminescence from SiC Nanocrystals Embedded in SiO2
- Year: 2001
- Volume: 4
- Issue: 2
- 5
- 1283
- Pages: 85-88
Applicability of Alkyl Monolayers on Si(111) Towards Practical Nano-scale Fabrication
- Year: 2001
- Volume: 4
- Issue: 1
- 1
- 1160
- Pages: 67-70
High Pressure; High Temperature Treatment to Create Oxygen Nano-Clusters and Defects in Single Crystalline Silicon
- Year: 2000
- Volume: 1
- Issue: 2
- 1
- 1254
- Pages: 119-126
Hot Wire CVD of Heterogeneous and Polycrystalline Silicon Semiconducting Thin Films for Applications in Thin Film Transistors and Solar Cells
- Year: 2000
- Volume: 1
- Issue: 2
- 5
- 1453
- Pages: 73-82